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GREEN ISLAND, N.Y., May 11 /PRNewswire/ -- Crystal IS, the world's leading supplier of ultra-low defect density bulk aluminum nitride (AlN), today announced the release of the world's first 2-inch AlN substrates for use inhigh power RF electronics, blue, and UV opto electronics.
Crystal IS has developed a manufacturing technique to grow a novel crystal which, when sliced and polished, can be used as a semiconductor substrate for the next generation in optoelectronic and high power RF devices. With a high thermal conductivity and a low lattice mismatch to the device layers, this material offers significant advantages in terms of reliability, operating powers and can reach wave lengths in the deep UV spectrum unavailable to conventional materials. According to Ding Day, Crystal IS CEO, "This development is significant as it opens up a number of market opportunities including bio-agent sensors, phototherapy, water, and air purification."
Sean Brownlee , director with venture capital firm 3i and board member of Crystal IS notes, "Crystal IS is poised for dramatic growth with the introduction of its 2-inch substrates. Crystal IS is leveraging nanotechnology to grow novel crystals which can be used for UV optoelectronics used in water and air purification."
Today, substrates represent 10-15% of the compound semiconductor market.The percentage of nitride devices requiring high performance substrates is expected to increase to 25% in 2007.
Crystal IS uses a patented technique for bulk AlN crystal growth, making it possible to manufacture 2-inch native substrates (sliced from the bulk crystal) with ultra-low defect densities. Two-inch AlN substrates are now commercially available from Crystal IS with up to 50% single crystal usable area. Further development is underway through 2007 to increase the usable areaon the 2-inch substrate towards 100%.