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Updated: July 8th, 2008 05:26 PM CDT

Cree Introduces GaN HEMT to Broaden WiMAX Power Transistor Options

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via PRNewswire

DURHAM, N.C., May 30 /PRNewswire-FirstCall/ -- Cree, Inc. (Nasdaq: CREE)today announced sample availability of its new 15-watt packaged galliumnitride (GaN) high electron mobility transistor (HEMT), the CGH35015, which isoptimized for broadband wireless access and for WiMAX applications operatingbetween 3.3 GHz and 3.9 GHz. GaN HEMTs offer higher linear power and enhancedefficiency performance over wider bandwidths than traditional technologiessuch as silicon LDMOS or GaAs.

(Photo: http://www.newscom.com/cgi-bin/prnh/20060530/CLTU019)

The CGH35015 typically produces 2.5 watts of average output power and 20percent drain efficiency over the frequency range of 3.3 to 3.9 GHz. Itfeatures 11 dB of small signal gain and 2 percent error vector magnitude (EVM)under orthogonal frequency-division multiplexing (OFDM) modulation whenoperated at 28 volts.

"The CGH35015 is the first in a series of packaged GaN products Cree plansto introduce this year for the broadband wireless access and WiMAX/WiBromarkets," said Jim Milligan , Cree's manager for wide bandgap RF products. "GaNis well suited for applications that operate under high power conditions andthat must meet high efficiency and stringent linearity requirements, likeWiMAX and other applications that operate between 2 and 6 GHz."

Additional information about the CGH35015 may be obtained by calling Creeat 919-287-7505 or visiting www.cree.com.

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