How do you think the new GigE standards will influence the machine vision industry?
Respond or ask your question now!
Providing design engineers with a high-sensitivity infrared detector capable of fast response times, TT electronics OPTEK Technology has developed a silicon phototransistor in a miniature surface mount package (0.10” [2.5mm] x 0.08” [2.0]) with a variety of lead options. Designated the OP570 Series, the NPN phototransistors feature an integral lens that enables the devices to operate with higher performance at lower cost.
The OP570 Series NPN silicon phototransistors are being specified in applications such as non-contact position sensing, infrared data acquisition and detection, machine automation, optical encoders, and reflective and transmissive (interruptive) sensors.
Electrical performance of the OP570 Series NPN phototransistors is characterized at collector-emitter breakdown voltages of 30V, emitter-collector breakdown voltage of 5V, collector current of 20mA and power dissipation of 130mW. On-state collector current is 2.5mA (min.), and the collector-emitter dark current is 100nA (max.). OPTEK will also produce devices outside these specifications to meet customer requirements.
The OP570 Series devices are RoHS-compliant, as well as compatible with high temperature (260°C) lead free soldering processes. Operating temperature range is -25°C to +85°C.
The OP570 Series devices are available with four different lead configurations, and are mechanically and spectrally matched to OPTEK’s OP270 Series 890nm GaAIAs infrared LEDs.
OPTEK Technology Carrollton, Texas www.OPTEKinc.com