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According to Ding Day, "Until recently, low-defect native AlN substrates have only been available in small pieces (1-inch or less) and typically ofirregular shapes, making them unsuitable for high volume wafer fabrication. Alternative techniques do exist to produce 'quasi-bulk' AlN substrates, but these all involve growing on non-native substrates and result in a high levelof defect densities- more than 100,000 times that of the native substrate. The release of low-defect 2-inch AlN substrates will make this technology compatible with most optoelectronic process lines and will enable the commercialization of deep UV optoelectronic products."
The company is currently expanding its manufacturing facility and has recently expanded its executive team with the addition of Dr. Ding Day as CEO and Tim Bettles as VP of Business Development, Sales and Marketing.
About Crystal IS
Founded in 1997, Crystal IS produces crystals from a new type of semiconductor material that is then sliced into wafers and used for new generation semiconductor devices. Crystal IS is privately held and backed by 3i, ARCH Venture Partners, JVP, Harris & Harris Group, Inc., and Counter Point Ventures. To learn more about Crystal IS, visithttp://www.crystal-is.com .Contacts: Ding Day Crystal IS (518) 271-7375 http://www.crystal-is.com Katja Gehrt 3i US (650) 470-3210 email@example.com http://www.3ius.com
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SOURCE 3i Corporation
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